silicon epitaxial planar diodes of 2 1 features maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified low capacitance. (c = 0.85 pf max) high reliability with glass seal. reverse voltage v r 3 v average rectified current i o 30 ma power dissipation pd 150 mw junction temperature tj 100 c storage temperature tstg ? 55 to +100 c forward current i f 8 ? ? ma v f = 0.5 v reverse current i r ? ? 50 a v r = 0.5 v reverse voltage v r 3.0 ? ? v i r = 1 ma capacitance c ? ? 0.85 pf v r = 0.5 v, f = 1 mhz esd-capability * ? 30 ? ? v c = 200 pf, r = 0 ? , both forward and reverse direction 1 pulse. note : failure criterion ; i r > 50 a at v r = 0.5 v 1SS86 0.079(2.0) max 0.020(0.52) typ 0.165 (4.2) max 1.0 2(26.0) min. 1.0 2(26.0) min. do-35(glass) dimensions in millimeters www.sunmate.tw mechanical data case: do-35, glass case polarity: color band denotes cathode weight: 0.004 ounces, 0.13 grams ! ! ! ! ! symbol value unit symbol min typ max unit test condition characteristic characteristic
2of2 0.1 10 1.0 0.1 10 f = 1mhz 0 0.4 1.0 0.6 0.2 0.8 0 1 5 4 3 2 1.0 10 -1 10 -2 10 -3 10 -4 forward current i f (a) 10 -5 fig.1 forward current vs. forward voltage forward voltage v f (v) 10 -4 10 -5 10 -6 10 -7 10 -8 reverse current i r (a) fig.2 reverse current vs. reverse voltage reverse voltage v r (v) fig.3 capacitance vs. reverse voltage reverse voltage v r (v) capacitance c (pf) www.sunmate.tw
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